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SUR2X120-02
Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227(ISOTOP)
Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
SUR2X120-02
VRSM V 200
VRRM V 200
R S T U V W
Symbol IFRMS IFAVM IFRM
Test Conditions TVJ=TVJM TC=70oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
Maximum Ratings 150 123 600 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 150 -40...+150
Unit A
IFSM
TVJ=150oC TVJ=45oC
A
I2t
TVJ=150oC
A2s
TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Mounting torque Terminal connection torque (M4)
o
C
250 2500 1.5/13 1.5/13 30
W V~ Nm/lb.in. g
SUR2X120-02
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=120A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM
Characteristic Values typ. max. 1 0.5 20 0.89 0.95 1.10 0.7 2.1 0.5 1.0
Unit
IR
mA
VF VTO rT RthJC RthCK trr IRM
V V m K/W ns A
IF=1A; -di/dt=400A/us; VR=30V; TVJ=25oC _ VR=100V; IF=100A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C
o
35 12
50 15
FEATURES
* International standard package miniBLOC (ISOTOP compatible) * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling
SUR2X120-02
Ultra Fast Recovery Epitaxial Diodes
200 A 175 IF 150 125 100
TVJ=150C
2.0 C Qr 1.5
TVJ= 100C VR = 100V
60 A 50 IRM 40
TVJ= 100C VR = 100V
1.0
75
TVJ=100C
IF=240A IF=120A IF= 60A
IF=240A IF=120A IF= 60A
30 20
50
TVJ=25C
0.5 10 0.0 10 0 100 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt
25 0 0.0
0.5
1.0 V VF
1.5
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt
150 ns
TVJ= 100C VR = 100V
Fig. 3 Typ. peak reverse current IRM versus -diF/dt
12 V 10 VFR
TVJ= 100C IF = 120A VFR
2.0
3.0 us 2.5 tfr 2.0
1.5 Kf 1.0
Qr IRM
trr 125
IF=240A IF=120A IF= 60A
8
tfr
100
6 4
1.5 1.0 0.5 0.0 100 200 300 400 500 A/us diF/dt
0.5
75 2
0.0 0 50 100 TVJ C 150
50 0 200 400 600 800 A/us -diF/dt
0 0
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W
D=0.5
Fig. 5 Typ. recovery time trr versus -diF/dt
Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0725 0.1423 0.2852 ti (s) 0.028 0.092 0.35
0.1 ZthJC
0.2 0.1 0.05 0.02
0.01
0.01 Single Pulse
0.001 0.001
0.01
0.1
1s
10 t
Fig. 7 Transient thermal impedance junction to case at various duty cycles

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